A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).
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